Foresee FLXC2004G-N1
LPDDR4X/LPDDR4 32gb SDRAM
  • Part No. - FLXC2004G-N1
  • Memory Type - LPDDR4 / LPDDR4X
  • Density - 32Gb
  • Configuration - 1Gig x 32 (2 Channels x 16 I/O)
  • Data Rate - 4266Mbps
  • Package - 200-ball VFBGA (10mm x 14.5mm x 1.0mm max)
  • Voltage - 1.8V / 1.1V / 1.1V or 0.6V
  • Operating Temperature - -25°C ~ +85°C
The FORESEE Mobile Low-Power DDR4 SDRAM (LPDDR4X/LPDDR4) is a high-speed CMOS, dynamic random-access memory internally configured with either 1 or 2 channels. Each channel is comprised of 16 DQs and 8 banks.
The LPDDR4X/LPDDR4 uses a 2-tick, single-data-rate (SDR) protocol on the CA bus to reduce the number of input signals in the system. The term "2-tick" means that the command/address is decoded across two transactions, such that half of the command/address is captured with each of two consecutive rising edges of CK. The 6-bit CA bus contains command, address, and bank information. Some commands such as READ, WRITE, MASKED WRITE, and ACTIVATE require two consecutive 2-tick SDR commands to complete the instruction.
The FORESEE LPDDR4X/LPDDR4 uses a double-data-rate (DDR) protocol on the DQ bus to achieve highspeed operation. The DDR interface transfers two data bits to each DQ lane in one clock cycle and is matched to a 16n-prefetch DRAM architecture. A write/read access consists of a single 16n-bit-wide data transfer to/from the DRAM core and 16 corresponding n-bit-wide data transfers at the I/O pins.

Key Features

Specification Compatibility

- JEDEC Standard No. JESD209-4-1, No. JESD209-4B

Supported Features

- Ultra-low-voltage core and I/O power supplies

- VDD1 = 1.70-1.95V; 1.80V nominal

- VDD2 = 1.06-1.17V; 1.10V nominal

- VDDQ = 1.06-1.17V; 1.10V nominal

- or VDDQ = 0.57-0.65V; 0.60V nominal

Frequency range

- 2133-10 MHz (data rate range: 4266-20 Mbps/pin)

- 16n-prefetch DDR architecture

- 8 internal banks per channel for concurrent operation

- Single-data-rate CMD/ADR entry

- Bidirectional/differential data strobe per byte lane

- Programmable READ and WRITE latencies (RL/WL)

- Programmable and on-the-fly burst lengths (BL = 16, 32)

- Directed per-bank refresh for concurrent bank operation and ease of command scheduling

- Up to 17 GB/s per chip (2 channels x 8.5 GB/s)

- On-chip temperature sensor to control self refresh rate

- Partial-array self refresh (PASR)

- Selectable output drive strength (DS)

- Clock-stop capability

- RoHS-compliant, “green” packaging

- Programmable VSSQ (ODT) termination

- Single-ended CK and DQS support

Options

- VDD1/VDD2/VDDQ: 1.80V/1.10V/1.10V or 0.60V

Array configuration

- 1Gig x 32 (2 channels x 16 I/O)

FBGA “green” package

- 200-ball VFBGA (10mm x 14.5mm x 1.0mm max)

Speed grade, cycle time

- 468ps @ RL = 36/40

Operating temperature range

- -25°C to +85°C